Print Page
SI4816BDY-T1-GE3
Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 5.8 A, 5.8 A, 0.0155 ohm
Image is for illustrative purposes only. Please refer to product description.
1,681 total stock globally
Need more?
1681 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.800 ($2.070) |
| 500+ | $1.710 ($1.9665) |
| 1000+ | $1.600 ($1.840) |
| 5000+ | $1.490 ($1.7135) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$180.00 ($207.00 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4816BDY-T1-GE3
Order Code2101479RL
Technical Datasheet
Transistor PolarityN Channel + Schottky
Channel TypeN Channel + Schottky
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id5.8A
Continuous Drain Current Id N Channel5.8A
On Resistance Rds(on)0.0155ohm
Continuous Drain Current Id P Channel5.8A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0155ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.0155ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
Power Dissipation Pd1.25W
No. of Pins8Pins
Power Dissipation N Channel1.25W
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI4816BDY-T1-GE3 is a dual N-channel MOSFET with Schottky diode housed in a surface-mount package.
- Halogen-free
- LITTLE FOOT® Plus power MOSFET
- 100% Rg tested
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel + Schottky
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
5.8A
Continuous Drain Current Id P Channel
5.8A
Drain Source On State Resistance N Channel
0.0155ohm
Drain Source On State Resistance P Channel
0.0155ohm
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Power Dissipation P Channel
1.25W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel + Schottky
Drain Source Voltage Vds
30V
Continuous Drain Current Id
5.8A
On Resistance Rds(on)
0.0155ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
1.25W
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for SI4816BDY-T1-GE3
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000147