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SI4850BDY-T1-GE3
Power MOSFET, N Channel, 60 V, 11.3 A, 0.016 ohm, SOIC, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSI4850BDY-T1-GE3
Order Code2846625RL
Product RangeTrenchFET Gen IV
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.991 ($1.1396) |
| 500+ | $0.858 ($0.9867) |
| 1000+ | $0.779 ($0.8958) |
| 5000+ | $0.702 ($0.8073) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$99.10 ($113.96 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4850BDY-T1-GE3
Order Code2846625RL
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id11.3A
Drain Source On State Resistance0.016ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation4.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
MSLMSL 1 - Unlimited
SVHC0
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
11.3A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
4.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
0
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.016ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.8V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:0
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001814