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SI4925DDY-T1-GE3
Dual MOSFET, P Channel, 30 V, 8 A
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4925DDY-T1-GE3
Order Code1779276RL
Your Part Number
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.280 ($1.472) |
| 500+ | $1.020 ($1.173) |
| 1000+ | $0.925 ($1.0638) |
Price for:Each (Supplied on Cut Tape)
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Multiple: 5
$128.00 ($147.20 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4925DDY-T1-GE3
Order Code1779276RL
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds30V
Continuous Drain Current Id8A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel-
On Resistance Rds(on)0.024ohm
Continuous Drain Current Id P Channel8A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.024ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation Pd5W
Power Dissipation N Channel-
Power Dissipation P Channel5W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI4925DDY-T1-GE3 is a -30V Dual P-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
- 100% UIS Tested
Applications
Power Management, Consumer Electronics, Computers & Computer Peripherals
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id
8A
Continuous Drain Current Id N Channel
-
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance N Channel
-
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
5W
Power Dissipation P Channel
5W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.024ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.024ohm
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0002