Print Page
Image is for illustrative purposes only. Please refer to product description.
2,782 total stock globally
Need more?
2782 Delivery in 3-5 Business Days(UK stock)
Quantity | Price (Incl GST) |
---|---|
100+ | $1.410 ($1.6215) |
500+ | $1.120 ($1.288) |
1000+ | $0.983 ($1.1304) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$141.00 ($162.15 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4948BEY-T1-E3
Order Code2396086RL
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id2.4A
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)0.1ohm
Continuous Drain Current Id N Channel2.4A
Continuous Drain Current Id P Channel2.4A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.1ohm
Drain Source On State Resistance P Channel0.1ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Transistor Case StyleSOIC
Power Dissipation Pd1.4W
No. of Pins8Pins
Power Dissipation N Channel1.4W
Power Dissipation P Channel1.4W
Operating Temperature Max175°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI4948BEY-T1-E3 is a dual P-channel MOSFET housed in a surface-mount package.
- TrenchFET® power MOSFET
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
2.4A
On Resistance Rds(on)
0.1ohm
Continuous Drain Current Id P Channel
2.4A
Drain Source On State Resistance N Channel
0.1ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
1.4W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
2.4A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.1ohm
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
1.4W
Power Dissipation N Channel
1.4W
Operating Temperature Max
175°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Singapore
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Singapore
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000262