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SI4948BEY-T1-GE3
Dual MOSFET, P Channel, 60 V, 2.4 A
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4948BEY-T1-GE3
Order Code1779277RL
Your Part Number
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.530 ($1.7595) |
| 500+ | $1.210 ($1.3915) |
| 1000+ | $1.040 ($1.196) |
| 5000+ | $0.993 ($1.142) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$153.00 ($175.95 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4948BEY-T1-GE3
Order Code1779277RL
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id2.4A
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel-
On Resistance Rds(on)0.1ohm
Continuous Drain Current Id P Channel2.4A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.1ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
No. of Pins8Pins
Power Dissipation Pd2.4W
Power Dissipation N Channel-
Power Dissipation P Channel1.4W
Operating Temperature Max175°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI4948BEY-T1-GE3 is a dual P-channel MOSFET housed in a surface-mount package.
- Halogen-free
- TrenchFET® power MOSFET
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
2.4A
Continuous Drain Current Id N Channel
-
Continuous Drain Current Id P Channel
2.4A
Drain Source On State Resistance N Channel
-
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
2.4W
Power Dissipation P Channel
1.4W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
P Channel
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
0.1ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.1ohm
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
-
Operating Temperature Max
175°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000127