Print Page
SI5908DC-T1-E3
Dual MOSFET, N Channel, 20 V, 20 V, 4.4 A, 4.4 A, 0.032 ohm
Image is for illustrative purposes only. Please refer to product description.
3,718 total stock globally
Need more?
3718 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $3.300 ($3.795) |
| 10+ | $2.130 ($2.4495) |
| 100+ | $1.440 ($1.656) |
| 500+ | $1.140 ($1.311) |
| 1000+ | $0.958 ($1.1017) |
Price for:Each
Minimum: 1
Multiple: 1
$3.30 ($3.80 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5908DC-T1-E3
Order Code2335337
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel4.4A
Continuous Drain Current Id P Channel4.4A
Drain Source On State Resistance N Channel0.032ohm
Drain Source On State Resistance P Channel0.032ohm
Transistor Case StyleChipFET
No. of Pins8Pins
Power Dissipation N Channel1.1W
Power Dissipation P Channel1.1W
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI5908DC-T1-E3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for load, battery and PA switch applications.
- TrenchFET® power MOSFET
- Ultra low RDS (ON)
- Excellent power handling in compact footprint
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
4.4A
Drain Source On State Resistance P Channel
0.032ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.1W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
4.4A
Drain Source On State Resistance N Channel
0.032ohm
Transistor Case Style
ChipFET
Power Dissipation N Channel
1.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005