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SI5935CDC-T1-GE3
Dual MOSFET, P Channel, 20 V, 20 V, 4 A, 4 A, 0.083 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI5935CDC-T1-GE3
Order Code2646387RL
Product RangeTrenchFET Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 24 week(s)
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.589 ($0.6774) |
| 500+ | $0.511 ($0.5876) |
| 1500+ | $0.431 ($0.4956) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$58.90 ($67.74 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5935CDC-T1-GE3
Order Code2646387RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id4A
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel4A
On Resistance Rds(on)0.083ohm
Continuous Drain Current Id P Channel4A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.083ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.083ohm
Gate Source Threshold Voltage Max1V
Transistor Case StyleChipFET
No. of Pins8Pins
Power Dissipation Pd3.1W
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
4A
Continuous Drain Current Id N Channel
4A
Continuous Drain Current Id P Channel
4A
Drain Source On State Resistance N Channel
0.083ohm
Drain Source On State Resistance P Channel
0.083ohm
Transistor Case Style
ChipFET
Power Dissipation Pd
3.1W
Power Dissipation P Channel
3.1W
Product Range
TrenchFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.083ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000129