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SI7540ADP-T1-GE3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 8 A, 8 A, 0.0115 ohm
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ManufacturerVISHAY
Manufacturer Part NoSI7540ADP-T1-GE3
Order Code2707201RL
Product RangeTrenchFET Series
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.900 ($2.185) |
| 500+ | $1.520 ($1.748) |
| 1000+ | $1.480 ($1.702) |
| 5000+ | $1.450 ($1.6675) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$190.00 ($218.50 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7540ADP-T1-GE3
Order Code2707201RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id8A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.0115ohm
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel8A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0115ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.0115ohm
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max1.4V
No. of Pins8Pins
Power Dissipation Pd1.6W
Power Dissipation N Channel1.6W
Power Dissipation P Channel1.6W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHC0
Product Overview
N- and P-channel 20V (D-S) MOSFET suitable for use in DC/DC converters, synchronous buck converter, synchronous rectifier, load switch and motor drive switch.
- TrenchFET® power MOSFET
- Thermally enhanced PowerPAK®
- 100% Rg tested
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
8A
On Resistance Rds(on)
0.0115ohm
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance N Channel
0.0115ohm
Drain Source On State Resistance P Channel
0.0115ohm
Gate Source Threshold Voltage Max
1.4V
Power Dissipation Pd
1.6W
Power Dissipation P Channel
1.6W
Product Range
TrenchFET Series
Automotive Qualification Standard
-
SVHC
0
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
8A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
PowerPAK SO
No. of Pins
8Pins
Power Dissipation N Channel
1.6W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:0
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000226