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SI7998DP-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 30 A, 30 A, 0.0076 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI7998DP-T1-GE3
Order Code3772791RL
Product RangeTrenchFET Series
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.610 ($1.8515) |
| 500+ | $1.290 ($1.4835) |
| 1000+ | $1.100 ($1.265) |
| 5000+ | $0.994 ($1.1431) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$161.00 ($185.15 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7998DP-T1-GE3
Order Code3772791RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id30A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.0076ohm
Continuous Drain Current Id N Channel30A
Continuous Drain Current Id P Channel30A
Drain Source On State Resistance N Channel0.0076ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.0076ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Transistor Case StylePowerPAK SO
Power Dissipation Pd40W
No. of Pins8Pins
Power Dissipation N Channel40W
Power Dissipation P Channel40W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
SVHCLead (21-Jan-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.0076ohm
Continuous Drain Current Id P Channel
30A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAK SO
No. of Pins
8Pins
Power Dissipation P Channel
40W
Product Range
TrenchFET Series
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
30A
Drain Source On State Resistance N Channel
0.0076ohm
Drain Source On State Resistance P Channel
0.0076ohm
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
40W
Power Dissipation N Channel
40W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001