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SI9926CDY-T1-E3
Dual MOSFET, N Channel, 20 V, 8 A, 0.018 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI9926CDY-T1-E3
Order Code1684059RL
Your Part Number
Technical Datasheet
977 total stock globally
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.480 ($1.702) |
| 500+ | $1.210 ($1.3915) |
| 1000+ | $1.060 ($1.219) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$148.00 ($170.20 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI9926CDY-T1-E3
Order Code1684059RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id8A
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel8A
On Resistance Rds(on)0.018ohm
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.018ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel-
Gate Source Threshold Voltage Max1.5V
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation Pd3.1W
Power Dissipation N Channel3.1W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI9926CDY-T1-E3 is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for DC-to-DC converter application.
- TrenchFET® power MOSFET
- 100% UIS tested
Applications
Industrial, Power Management, Computers & Computer Peripherals
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
8A
Continuous Drain Current Id N Channel
8A
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.018ohm
Drain Source On State Resistance P Channel
-
Transistor Case Style
SOIC
Power Dissipation Pd
3.1W
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
-
On Resistance Rds(on)
0.018ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004