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ManufacturerVISHAY
Manufacturer Part NoSIR450DP-T1-RE3
Order Code3765819RL
Product RangeTrenchFET Gen IV
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR450DP-T1-RE3
Order Code3765819RL
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds45V
Continuous Drain Current Id113A
Drain Source On State Resistance0.0018ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.3V
Power Dissipation48W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
Product Overview
- N-channel 45V (D-S) MOSFET
- TrenchFET® Gen IV power MOSFET
- 45V drain-source break-down voltage
- Tuned for low Qg and Qoss
- 100% Rg and UIS tested
- Used in synchronous rectification, high power density DC/DC and motor drive control
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
113A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
48W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
45V
Drain Source On State Resistance
0.0018ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.3V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0002