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ManufacturerVISHAY
Manufacturer Part NoSIR876BDP-T1-RE3
Order Code3765823
Product RangeTrenchFET Gen IV
Technical Datasheet
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIR876BDP-T1-RE3
Order Code3765823
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id51.4A
Drain Source On State Resistance0.009ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation71.4W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
SVHCLead (21-Jan-2025)
Product Overview
N-channel 100V (D-S) MOSFET is typically used in applications such as synchronous rectification, primary side switch, DC/DC converters, power supplies and motor drive control.
- TrenchFET® Gen IV power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Tuned for the lowest RDS x Qoss FOM
- 100% Rg and UIS tested
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
51.4A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
71.4W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.009ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001