Print Page
SIRB40DP-T1-GE3
Dual MOSFET, N Channel, 40 V, 40 V, 40 A, 40 A, 2700 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIRB40DP-T1-GE3
Order Code3772837RL
Product RangeTrenchFET Gen IV Series
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 35 week(s)
Notify me when back in stock
| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.610 ($1.8515) |
| 500+ | $1.280 ($1.472) |
| 1000+ | $1.060 ($1.219) |
| 5000+ | $1.050 ($1.2075) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$161.00 ($185.15 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIRB40DP-T1-GE3
Order Code3772837RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id40A
On Resistance Rds(on)0.0027ohm
Continuous Drain Current Id N Channel40A
Continuous Drain Current Id P Channel40A
Drain Source On State Resistance N Channel2700µohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel2700µohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Transistor Case StylePowerPAK SO
No. of Pins8Pins
Power Dissipation Pd46.2W
Power Dissipation N Channel46.2W
Power Dissipation P Channel46.2W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
Automotive Qualification Standard-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds P Channel
40V
On Resistance Rds(on)
0.0027ohm
Continuous Drain Current Id P Channel
40A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAK SO
Power Dissipation Pd
46.2W
Power Dissipation P Channel
46.2W
Product Range
TrenchFET Gen IV Series
Automotive Qualification Standard
-
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
Continuous Drain Current Id
40A
Continuous Drain Current Id N Channel
40A
Drain Source On State Resistance N Channel
2700µohm
Drain Source On State Resistance P Channel
2700µohm
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Power Dissipation N Channel
46.2W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001