Print Page
SIS176LDN-T1-GE3
Power MOSFET, N Channel, 70 V, 42.3 A, 0.0109 ohm, PowerPAK 1212, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | VISHAY |
|---|---|
| Manufacturer Part No | SIS176LDN-T1-GE3Copy |
| Manufacturer Standard Lead Time | 138 weeks |
| Order Code | Re-Reel3677854RL Cut Tape3677854 |
| Product Range | TrenchFET Gen IV |
| Your Part Number | |
| Technical Datasheet |
1,083 total stock globally
18,000 more incoming. You can reserve stock now
1,083 Delivery in 3-5 Business Days(UK stock)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $4.340 | $4.34 |
Cut Tape & Re-Reel
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $4.340 ($4.991) |
| 10+ | $2.680 ($3.082) |
| 100+ | $1.760 ($2.024) |
| 500+ | $1.390 ($1.5985) |
| 1000+ | $1.070 ($1.2305) |
| 5000+ | $1.050 ($1.2075) |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | VISHAY |
|---|---|
| Manufacturer Part No | SIS176LDN-T1-GE3Copy |
| Manufacturer Standard Lead Time | 138 weeks |
| Order Code | Re-Reel3677854RL Cut Tape3677854 |
| Product Range | TrenchFET Gen IV |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 70V |
| Continuous Drain Current Id | 42.3A |
| Drain Source On State Resistance | 0.0109ohm |
| Transistor Case Style | PowerPAK 1212 |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 4.5V |
| Gate Source Threshold Voltage Max | 1.6V |
| Power Dissipation | 39W |
| No. of Pins | 8Pins |
| Operating Temperature Max | 150°C |
| Product Range | TrenchFET Gen IV |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | Lead (04-Feb-2026) |
Product Overview
N-channel 70V (D-S) MOSFET in PowerPAK 1212-8 package is typically used in synchronous rectification, primary side switch, DC/DC converter, motor drive control and load switch applications.
- TrenchFET® Gen IV power MOSFET
- Very low RDS x Qg figure-of-merit (FOM)
- Tuned for the lowest RDS x Qoss FOM
- 100% Rg and UIS tested
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 42.3A |
| Transistor Case Style | PowerPAK 1212 |
| Rds(on) Test Voltage | 4.5V |
| Power Dissipation | 39W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | Lead (04-Feb-2026) |
| Drain Source Voltage Vds | 70V |
|---|---|
| Drain Source On State Resistance | 0.0109ohm |
| Transistor Mounting | Surface Mount |
| Gate Source Threshold Voltage Max | 1.6V |
| No. of Pins | 8Pins |
| Product Range | TrenchFET Gen IV |
| MSL | MSL 1 - Unlimited |
Technical Docs (2)
Legislation and Environmental
| Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin: | China Country in which last significant manufacturing process was carried out |
|---|---|
| Tariff No: | 85412900 |
| US ECCN: | EAR99 |
| EU ECCN: | NLR |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | Lead (04-Feb-2026) |
| Download Product Compliance Certificate | Product Compliance Certificate |
| Weight (kg): | .000064 |