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SISS46DN-T1-GE3
Power MOSFET, N Channel, 100 V, 45.3 A, 0.0106 ohm, PowerPAK 1212, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSISS46DN-T1-GE3
Order Code3019142
Product RangeTrenchFET Gen IV
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $2.320 ($2.668) |
| 10+ | $1.930 ($2.2195) |
| 100+ | $1.410 ($1.6215) |
| 500+ | $1.370 ($1.5755) |
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Multiple: 1
$2.32 ($2.67 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS46DN-T1-GE3
Order Code3019142
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id45.3A
Drain Source On State Resistance0.0106ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.4V
Power Dissipation65.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
45.3A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
65.7W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0106ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.4V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001