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SIZ250DT-T1-GE3
Dual MOSFET, N Channel, 60 V, 60 V, 38 A, 38 A, 0.01007 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZ250DT-T1-GE3
Order Code3280636RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.290 ($1.4835) |
| 500+ | $1.090 ($1.2535) |
| 1500+ | $0.894 ($1.0281) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$129.00 ($148.35 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ250DT-T1-GE3
Order Code3280636RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id38A
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel38A
On Resistance Rds(on)0.01007ohm
Continuous Drain Current Id P Channel38A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.01007ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.01007ohm
Gate Source Threshold Voltage Max2.4V
Transistor Case StylePowerPAIR
No. of Pins8Pins
Power Dissipation Pd33W
Power Dissipation N Channel33W
Power Dissipation P Channel33W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
38A
Continuous Drain Current Id N Channel
38A
Continuous Drain Current Id P Channel
38A
Drain Source On State Resistance N Channel
0.01007ohm
Drain Source On State Resistance P Channel
0.01007ohm
Transistor Case Style
PowerPAIR
Power Dissipation Pd
33W
Power Dissipation P Channel
33W
Product Range
TrenchFET Gen IV Series
Automotive Qualification Standard
-
SVHC
Lead (07-Nov-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
On Resistance Rds(on)
0.01007ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Power Dissipation N Channel
33W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000123