Print Page
SIZ340BDT-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 69.3 A, 69.3 A, 0.00359 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZ340BDT-T1-GE3
Order Code3587056RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
2,013 total stock globally
6,000 more incoming. You can reserve stock now
2013 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $0.766 ($0.8809) |
| 500+ | $0.541 ($0.6222) |
| 1500+ | $0.530 ($0.6095) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$76.60 ($88.09 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ340BDT-T1-GE3
Order Code3587056RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id69.3A
Continuous Drain Current Id N Channel69.3A
On Resistance Rds(on)0.00359ohm
Continuous Drain Current Id P Channel69.3A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.00359ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.00359ohm
Transistor Case StylePowerPAIR
Gate Source Threshold Voltage Max2.4V
No. of Pins8Pins
Power Dissipation Pd31W
Power Dissipation N Channel31W
Power Dissipation P Channel31W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
69.3A
Continuous Drain Current Id P Channel
69.3A
Drain Source On State Resistance N Channel
0.00359ohm
Drain Source On State Resistance P Channel
0.00359ohm
Gate Source Threshold Voltage Max
2.4V
Power Dissipation Pd
31W
Power Dissipation P Channel
31W
Product Range
TrenchFET Gen IV Series
Automotive Qualification Standard
-
SVHC
Lead (07-Nov-2024)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
69.3A
On Resistance Rds(on)
0.00359ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAIR
No. of Pins
8Pins
Power Dissipation N Channel
31W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001