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SIZ980BDT-T1-GE3
Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZ980BDT-T1-GE3
Order Code3368951RL
Product RangeTrenchFET Gen IV SkyFET Series
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.730 ($1.9895) |
| 500+ | $1.470 ($1.6905) |
| 1000+ | $1.230 ($1.4145) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$173.00 ($198.95 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ980BDT-T1-GE3
Order Code3368951RL
Product RangeTrenchFET Gen IV SkyFET Series
Technical Datasheet
Transistor PolarityN Channel + Schottky
Channel TypeN Channel + Schottky
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id197A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)817µohm
Continuous Drain Current Id N Channel197A
Continuous Drain Current Id P Channel197A
Drain Source On State Resistance N Channel817µohm
Drain Source On State Resistance P Channel817µohm
Rds(on) Test Voltage10V
Transistor Case StylePowerPAIR
Gate Source Threshold Voltage Max2.2V
No. of Pins8Pins
Power Dissipation Pd66W
Power Dissipation N Channel66W
Power Dissipation P Channel66W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV SkyFET Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel + Schottky
Drain Source Voltage Vds
30V
Continuous Drain Current Id
197A
On Resistance Rds(on)
817µohm
Continuous Drain Current Id P Channel
197A
Drain Source On State Resistance P Channel
817µohm
Transistor Case Style
PowerPAIR
No. of Pins
8Pins
Power Dissipation N Channel
66W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel + Schottky
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
197A
Drain Source On State Resistance N Channel
817µohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.2V
Power Dissipation Pd
66W
Power Dissipation P Channel
66W
Product Range
TrenchFET Gen IV SkyFET Series
Automotive Qualification Standard
-
SVHC
Lead (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001