Print Page
SIZF918DT-T1-GE3
Dual MOSFET, N Channel + Schottky, 30 V, 30 V, 60 A, 60 A, 0.0012 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZF918DT-T1-GE3
Order Code2932987RL
Product RangeTrenchFET Gen IV SkyFET Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 16 week(s)
Notify me when back in stock
| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.610 ($1.8515) |
| 500+ | $1.290 ($1.4835) |
| 1000+ | $1.240 ($1.426) |
| 5000+ | $1.200 ($1.380) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$161.00 ($185.15 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZF918DT-T1-GE3
Order Code2932987RL
Product RangeTrenchFET Gen IV SkyFET Series
Technical Datasheet
Transistor PolarityN Channel + Schottky
Channel TypeN Channel + Schottky
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id60A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel60A
On Resistance Rds(on)0.0012ohm
Continuous Drain Current Id P Channel60A
Drain Source On State Resistance N Channel0.0012ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.0012ohm
Gate Source Threshold Voltage Max2.2V
Transistor Case StylePowerPAIR
No. of Pins8Pins
Power Dissipation Pd50W
Power Dissipation N Channel50W
Power Dissipation P Channel50W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV SkyFET Series
Qualification-
Automotive Qualification Standard-
Technical Specifications
Transistor Polarity
N Channel + Schottky
Drain Source Voltage Vds
30V
Continuous Drain Current Id
60A
Continuous Drain Current Id N Channel
60A
Continuous Drain Current Id P Channel
60A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.0012ohm
Transistor Case Style
PowerPAIR
Power Dissipation Pd
50W
Power Dissipation P Channel
50W
Product Range
TrenchFET Gen IV SkyFET Series
Automotive Qualification Standard
-
SVHC
Lead (07-Nov-2024)
Channel Type
N Channel + Schottky
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.0012ohm
Drain Source On State Resistance N Channel
0.0012ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Power Dissipation N Channel
50W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.003