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50+ | $3.920 ($4.508) |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoTSTA7100
Order Code1612512
Technical Datasheet
Peak Wavelength875nm
Angle of Half Intensity5°
Diode Case StyleTO-18
Radiant Intensity (Ie)600mW/Sr
Rise Time600ns
Fall Time tf-
Forward Current If(AV)100mA
Forward Voltage VF Max1.4V
Operating Temperature Min-
Operating Temperature Max-
Automotive Qualification Standard-
Product Range-
MSL-
SVHCNo SVHC (07-Nov-2024)
Product Overview
The TSTA7100 is a 875nm Infrared Emitting Diode in GaAlAs technology with lens. It is suitable for use in radiation source near infrared range.
- Hermetically sealed
- High reliability
- High radiant power
- High radiant intensity
- ϕ = ±5° Angle of half intensity
- Low forward voltage
- Suitable for high pulse current operation
- Good spectral matching with Si photodetectors
Technical Specifications
Peak Wavelength
875nm
Diode Case Style
TO-18
Rise Time
600ns
Forward Current If(AV)
100mA
Operating Temperature Min
-
Automotive Qualification Standard
-
MSL
-
Angle of Half Intensity
5°
Radiant Intensity (Ie)
600mW/Sr
Fall Time tf
-
Forward Voltage VF Max
1.4V
Operating Temperature Max
-
Product Range
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85414100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000336