Print Page
WG40N120UFW1Q
IGBT, 80 A, 1.75 V, 750 W, 1.2 kV, TO-247, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoWG40N120UFW1Q
Order Code4697768
Technical Datasheet
240 total stock globally
Need more?
240 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 1+ | $10.160 ($11.684) |
| 10+ | $6.050 ($6.9575) |
| 100+ | $4.650 ($5.3475) |
| 500+ | $4.400 ($5.060) |
Price for:Each
Minimum: 1
Multiple: 1
$10.16 ($11.68 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoWG40N120UFW1Q
Order Code4697768
Technical Datasheet
Continuous Collector Current80A
Collector Emitter Saturation Voltage1.75V
Power Dissipation750W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
Product Overview
WG40N120UFW1Q is an IGBT. It uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode. This device is part of the ultra-fast series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converter. Typical applications include solar inverter, UPS, welding converters, PFC and mid to high switching frequency applications.
- Ultra-fast switching series, EMI improved design
- Positive temperature efficient for easy parallel operating
- Very soft, fast recovery anti-parallel diode
- Collector-emitter breakdown voltage is 1200V min at VGE = 0V; IC = 1mA
- Diode forward voltage is 2.15V typ at VGE = 0V; IF = 40A; Tj = 25°C
- Zero gate voltage collector current is 250μA max at VCE = 1200V; VGE = 0V; Tj = 25°C
- Gate charge is 210nC typ at VCC = 960V; IC = 40A; VGE = 15V;Tj = 25°C
- Turn-off delay time is 146nS typ at Tj = 25°C;VCC = 600V; IC = 40A; VGE = 15V / 0V;RG = 3.6ohm
- TO247 package
- Maximum operating junction temperature is 175°C
Technical Specifications
Continuous Collector Current
80A
Power Dissipation
750W
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
Collector Emitter Saturation Voltage
1.75V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001