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WOLFSPEED C2M1000170D

Silicon Carbide MOSFET, Single, N Channel, 4.9 A, 1.7 kV, 0.95 ohm, TO-247

WOLFSPEED C2M1000170D
WOLFSPEED C2M1000170D
WOLFSPEED C2M1000170D
WOLFSPEED C2M1000170D
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Manufacturer:
WOLFSPEED WOLFSPEED
Manufacturer Part No:
C2M1000170D
Order Code:
2361497
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Technical Datasheet:
C2M1000170D   Datasheet
ECAD / MCAD
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Product Overview

The C2M1000170D from Cree is a 2nd generation Z-FET, through hole N channel silicon carbide power MOSFET in TO-247 package. This MOSFET features C2M SiC MOSFET technology, high blocking voltage with low On resistance, high speed switching with low capacitances, easy to parallel and simple to drive, avalanche ruggedness, ultra low drain gate capacitance, higher system efficiency, reduced cooling requirements and increased system reliability. Applications include auxiliary power supplies, switch mode power supplies and high voltage capacitive loads.
  • Drain to source voltage (Vds) of 1.7kV
  • Continuous drain current of 5A
  • Power dissipation of 69W
  • Operating junction temperature of -55°C to 150°C
  • Low on state resistance of 1ohm at Vgs of 20V

Applications

Power Management, Consumer Electronics, Portable Devices, Industrial

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
Single

:
N Channel

:
4.9A

:
1.7kV

:
0.95ohm

:
TO-247

:
3Pins

:
20V

:
2.4V

:
150°C

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Technical Documents (2)

1,526 total stock globally Need more?

1,526 UK stock available for 5-8 business days delivery

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

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