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IRF7324TRPBF
Dual MOSFET, Dual P Channel, 20 V, 9 A
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF7324TRPBF
Order Code2468013
Product RangeHEXFET Series
Also Known AsSP001570196
Technical Datasheet
12,444 total stock globally
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12444 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $1.900 ($2.185) |
| 50+ | $1.340 ($1.541) |
| 250+ | $1.050 ($1.2075) |
| 1000+ | $0.958 ($1.1017) |
| 2000+ | $0.939 ($1.0798) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$9.50 ($10.92 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7324TRPBF
Order Code2468013
Product RangeHEXFET Series
Also Known AsSP001570196
Technical Datasheet
Channel TypeDual P Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel9A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.018ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRF7324TRPBF is a HEXFET® dual P-channel MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
- Ruggedized design
- Trench technology
- Ultra low ON-resistance
- Low profile
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
Dual P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
9A
Drain Source On State Resistance P Channel
0.018ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SOIC
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005