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IRF7324TRPBF
Dual MOSFET, Dual P Channel, 20 V, 9 A
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF7324TRPBF
Order Code2468013RL
Product RangeHEXFET Series
Also Known AsSP001570196
Technical Datasheet
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| Quantity | Price (Incl GST) |
|---|---|
| 50+ | $1.340 ($1.541) |
| 250+ | $1.050 ($1.2075) |
| 1000+ | $0.958 ($1.1017) |
| 2000+ | $0.939 ($1.0798) |
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Multiple: 1
$134.00 ($154.10 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF7324TRPBF
Order Code2468013RL
Product RangeHEXFET Series
Also Known AsSP001570196
Technical Datasheet
Transistor PolarityP Channel
Channel TypeDual P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id9A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.018ohm
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel9A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel-
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.018ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
No. of Pins8Pins
Power Dissipation Pd2W
Power Dissipation N Channel-
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IRF7324TRPBF is a HEXFET® dual P-channel MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
- Ruggedized design
- Trench technology
- Ultra low ON-resistance
- Low profile
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
9A
On Resistance Rds(on)
0.018ohm
Continuous Drain Current Id P Channel
9A
Drain Source On State Resistance N Channel
-
Drain Source On State Resistance P Channel
0.018ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
2W
Power Dissipation P Channel
2W
Product Range
HEXFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
Dual P Channel
Drain Source Voltage Vds N Channel
-
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
-
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005