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IRF9389TRPBF
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 6.8 A, 6.8 A, 0.022 ohm
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ManufacturerINFINEON
Manufacturer Part NoIRF9389TRPBF
Order Code2579952
Product RangeHEXFET Series
Also Known AsSP001551666
Technical Datasheet
900 total stock globally
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900 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 5+ | $0.795 ($0.9142) |
| 50+ | $0.536 ($0.6164) |
| 250+ | $0.410 ($0.4715) |
| 1000+ | $0.333 ($0.383) |
| 2000+ | $0.330 ($0.3795) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$3.98 ($4.57 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF9389TRPBF
Order Code2579952
Product RangeHEXFET Series
Also Known AsSP001551666
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel6.8A
Continuous Drain Current Id P Channel6.8A
Drain Source On State Resistance N Channel0.022ohm
Drain Source On State Resistance P Channel0.022ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
HEXFET® power MOSFET suitable for use in high and low sides switches for inverter, high and low side switches for generic half bridge.
- High-side P-channel MOSFET
- Industry-standard pinout
- Compatible with existing surface mount technique
- Increased power density
- Easier drive circuitry
- Multi-vendor compatibility
- Easier manufacturing
- Environmentally friendlier
- Increased reliability
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
6.8A
Drain Source On State Resistance P Channel
0.022ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
6.8A
Drain Source On State Resistance N Channel
0.022ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001