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IRF9389TRPBF
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 6.8 A, 6.8 A, 0.022 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoIRF9389TRPBF
Order Code2579952RL
Product RangeHEXFET Series
Also Known AsSP001551666
Technical Datasheet
900 total stock globally
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900 Delivery in 3-5 Business Days(UK stock)
| Quantity | Price (Incl GST) |
|---|---|
| 50+ | $0.536 ($0.6164) |
| 250+ | $0.410 ($0.4715) |
| 1000+ | $0.333 ($0.383) |
| 2000+ | $0.330 ($0.3795) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
$53.60 ($61.64 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF9389TRPBF
Order Code2579952RL
Product RangeHEXFET Series
Also Known AsSP001551666
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id6.8A
Continuous Drain Current Id N Channel6.8A
On Resistance Rds(on)0.022ohm
Continuous Drain Current Id P Channel6.8A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.022ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.022ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.8V
No. of Pins8Pins
Power Dissipation Pd2W
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
HEXFET® power MOSFET suitable for use in high and low sides switches for inverter, high and low side switches for generic half bridge.
- High-side P-channel MOSFET
- Industry-standard pinout
- Compatible with existing surface mount technique
- Increased power density
- Easier drive circuitry
- Multi-vendor compatibility
- Easier manufacturing
- Environmentally friendlier
- Increased reliability
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
6.8A
Continuous Drain Current Id P Channel
6.8A
Drain Source On State Resistance N Channel
0.022ohm
Drain Source On State Resistance P Channel
0.022ohm
Gate Source Threshold Voltage Max
1.8V
Power Dissipation Pd
2W
Power Dissipation P Channel
2W
Product Range
HEXFET Series
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
6.8A
On Resistance Rds(on)
0.022ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001