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BFM520,115
Bipolar - RF Transistor, Dual NPN, 8 V, 9 GHz, 1 W, 70 mA, SOT-363
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Product Information
ManufacturerNXP
Manufacturer Part NoBFM520,115
Order Code1758050RL
Technical Datasheet
Transistor PolarityDual NPN
Collector Emitter Voltage Max8V
Power Dissipation1W
Continuous Collector Current70mA
Transistor Case StyleSOT-363
No. of Pins6Pins
DC Current Gain hFE Min120hFE
Transistor MountingSurface Mount
Operating Temperature Max175°C
Product Range-
Qualification-
Product Overview
The BFM520,115 is a dual NPN Wideband Transistor with two silicon RF dies in a surface-mount package. This transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analogue and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners.
- Small size
- Temperature and hFE matched
- Low noise and high gain
- High gain at low current and low capacitance at low voltage
- Gold metallization ensures excellent reliability
Applications
Industrial, Communications & Networking, Consumer Electronics, Power Management
Technical Specifications
Transistor Polarity
Dual NPN
Power Dissipation
1W
Transistor Case Style
SOT-363
DC Current Gain hFE Min
120hFE
Operating Temperature Max
175°C
Qualification
-
Collector Emitter Voltage Max
8V
Continuous Collector Current
70mA
No. of Pins
6Pins
Transistor Mounting
Surface Mount
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006