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STS4DNF60L
Dual MOSFET, N Channel, 60 V, 4 A, 0.045 ohm
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| Quantity | Price (Incl GST) |
|---|---|
| 100+ | $1.700 ($1.955) |
| 500+ | $1.540 ($1.771) |
| 1000+ | $1.520 ($1.748) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
$170.00 ($195.50 inc GST)
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTS4DNF60L
Order Code9935738RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id4A
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)0.045ohm
Continuous Drain Current Id N Channel4A
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.045ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.7V
No. of Pins8Pins
Power Dissipation Pd2.5W
Power Dissipation N Channel2.5W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The STS4DNF60L is a N-channel STripFET™ Power MOSFET for switching applications. This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- Standard outline for easy automated surface-mount assembly
- Low threshold gate drive
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
4A
On Resistance Rds(on)
0.045ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.045ohm
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
1.7V
Power Dissipation Pd
2.5W
Power Dissipation P Channel
-
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
4A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
2.5W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000149